3 edition of Band-gap engineering in sputter deposited amorphous/microcrystalline ScxGa1-xN found in the catalog.
Band-gap engineering in sputter deposited amorphous/microcrystalline ScxGa1-xN
by National Aeronautics and Space Administration, Langley Research Center, Available from NASA Center for AeroSpace Information in Hampton, Va, Hanover, MD
Written in English
|Statement||Mark E. Little, Martin E. Kordesch.|
|Series||ICASE report -- no. 2001-36, [NASA contractor report] -- NASA/CR-2001-211241, NASA contractor report -- NASA CR-211241.|
|Contributions||Kordesch, Martin E., Langley Research Center.|
|The Physical Object|
In this work, the structural properties of the monocrystalline vanadium pentoxide have been presented. Vanadium pentoxide (V2O5) films were deposited by using a DC reactive magnetron sputtering system at a working pressure of sputtered vanadium atoms were sputtered and oxidized in presence O2:Ar gas mixture by (5/95,10/90, 20/80,30/70,50/50).Author: Mohammed. K. Kalaf, Sabri. J. Mohammed, Mohammed. Sh. Muhammed. A thin-film flexible solar cell built on a plastic substrate comprises a cadmium telluride p-type layer and a cadmium sulfide n-type layer sputter deposited onto a plastic substrate at a temperature sufficiently low to avoid damaging or melting the plastic and to minimize crystallization of the cadmium telluride. A transparent conductive oxide layer overlaid by a bus bar network is deposited Cited by:
Hydrogenated amorphous Si (a-Si:H) is an important solar cell material. Here we demonstrate the fabrication of a-Si:H nanowires (NWs) and nanocones (NCs), using an easily scalable and IC-compatible process. We also investigate the optical properties of these nanostructures. These a-Si:H nanostructures display greatly enhanced absorption over a large range of wavelengths and angles of incidence Cited by: Electrical and band-gap properties of amorphous zinc–indium–tin oxide thin ﬁlms D.B. Buchholz, D.E. Profﬁt, M.D. Wisser, T.O. Mason, R.P.H. Changn Department of Materials Science and Engineering, Northwestern University, Campus Drive, Cook Hall Room , Evanston, IL , USA Received 25 October ; accepted 10 November
Band gap bowing and refractive index spectra of polycrystalline AlxIn12xN ﬁlms deposited by sputtering T. Peng and J. Pipreka) Materials Science Program, University of Delaware, Newark, Delaware G. Qiu and J. O. Olowolafe Department of Electrical Engineering, University of Delaware, Newark, Delaware K. M. Unruh and C. P. Swann. Zinc oxide (ZnO) belongs to the class of transparent conducting oxides that can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO 1/5(1).
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1 BAND-GAP ENGINEERING IN SPUTTER DEPOSITED AMORPHOUS/MICROCRYSTALLINE ScXGa1-xN MARK E. LITTLE1 AND MARTIN E. KORDESCH2 Abstract. Reactive sputtering was used to grow thin films of ScxGa1-xN with scandium concentrations of 20%- 70% on quartz substrates at temperatures of K.
X-ray diffraction (XRD) of the films showed either weak or. BAND-GAP ENGINEERING IN SPUTTER DEPOSITED AMORPHOUS/MICROCRYSTALLINE MARK E. LITTLE 1AND MARTIN E. KORDESCH _-Abstract. Reactive sputtering was used to grow thin films of Sc×Gal ×N with scandium concentrations of 20%% on quartz substrates at temperatures of K.
X-ray diffraction (XRD) of the films showed either weak or. Reactive sputtering was used to grow thin films of Sc x Ga 1-x N with scandium concentration of 20%% on quartz substrates at temperatures of K.
X-ray diffraction (XRD) of the films showed either weak or no structure, suggesting the films are amorphous or microcrystalline. Optical absorption spectra were taken of each sample and the optical band gap was determined.
Reactive sputtering was used to grow thin films of Sc x Ga 1−x N with scandium concentration of 20%–70% on quartz substrates at temperatures of – K.
X-ray diffraction (XRD) of the films showed either weak or no structure, suggesting the films are amorphous or by: Download Citation | Band-gap engineering in sputter-deposited ScxGa1−xN | Reactive sputtering was used to grow thin films of ScxGa1−xN with scandium concentration of 20%–70% on quartz.
Reactive sputtering was used to grow thin films of ScxGa1−xN with scandium concentration of 20%–70% on quartz substrates at temperatures of – K. X-ray diffraction (XRD) of the films. Microcrystalline silicon (μc-Si:H) μc-Si:H is a silicon-based thin film, with crystals in the range of 20– nm [ 38 ].
Those crystals are of different orientations and grown in columns which are separated by an amorphous phase. Usually μc-Si:H films are grown from SiH 4 and H 2 gas mixtures, but also SiF 4 Author: Mario Moreno, Roberto Ambrosio, ArturoTorres, Alfonso Torres, Pedro Rosales, Adrián Itzmoyotl, Migue.
Such multijunction cells, due to their spectrum splitting capability, have true potential for high-conversion efficiency. Amorphous silicon has a band gap of – eV, and thus microcrystalline silicon, with a band gap of eV, makes an ideal match to amorphous silicon in tandem by: 1.
Abstract Thin tungsten films were prepared by sputtering of pure tungsten in a cylindrical magnetron device. The XRD-patterns of tungsten films deposited at Pa argon pressure regularly exhibited only a very broad signal centered at 2 uf40 8—a distinctive mark of amorphous metals and alloys.
Get this from a library. Band-gap engineering in sputter deposited amorphous/microcrystalline ScxGa1-xN. [Mark E Little; Martin E Kordesch; Langley Research Center.].
details of these simulations to generate the amorphous and crystal structures are presented herein. A preliminary form of this study appeared in a proceedings paper .
Amorphous TiO 2 We created a atom model (64 Ti atoms and O atoms) with a mass density of g/cm3; a smaller atom supercell was cut out of the atom system. The Cited by: With the above information on studies for optimizing the effectof sputtering gas, film thickness, and oxygen partial pressure, P O 2, comprehensive investigations on band gap engineering and magnetism in xZn (1-x)O Mgco-sputtered thin films from Mg and Zn targets are then closely examined.
The optical band gap calculated from absorption spectra. Similarly from the RBS analysis the thickness of the amorphous silicon-germanium layer for the sample #71 is found to be å while the composition of Si, Ge and Ar are found to be %, % and 6% respectively. Microcrystalline and amorphous hydrogenated silicon films were preparaed by rf planar magnetron sputtering in the four kinds of inert gas, i.e., He, Ne, Ar, and Kr.
The dependence of such properties as x-ray diffraction, ir spectra, absorption coefficient, hydrogen content, dark conductivity and photoconductivity on the kind of inert gas was by: Electronic State of Amorphous Indium Gallium Zinc Oxide Films Deposited by DC Magnetron Sputtering with Water Vapor Introduction Nobuto Oka, Takafumi Aoi, Ryo Hayashi 1, Hideya Kumomi, and Yuzo Shigesato Graduate School of Science and Engineering, Aoyama Gakuin University, SagamiharaJapan.
Amorphous silicon–carbon alloy (a-Si x C1-x) thin films have been deposited by radio frequency (RF) sputter deposition. These films were obtained, from a composite target consisting of silicon fragments regularly distributed on the surface of a pure graphite disc, for different values of silicon surface fraction R Si/C, at an RF power of W.
X-ray diffraction diagrams show that all the Cited by: 3. Band-gap engineering in amorphous/microcrystalline ScxGa1-xN Materials Research Society Symposium - Proceedings. 1: Kordesch ME, Richardson HH. Electroluminescent textiles using sputter-deposited amorphous nitride-rare-earth ion coatings Materials Research Society Symposium - Proceedings.
1: Perjeru F, Bai. a-Si a-Si:H film a-Si:H layer a-Si:H TFT active matrix alloy Amorphous Silicon annealing Appl Phys applications atoms band gap band tail bias capacitance capacitor Cat-CVD channel length charge Chemical Vapor Deposition circuit conduction band contact resistance crystalline dangling bonds data line density device display doping drain effect 5/5(1).
Nanocrystalline hydrogenated silicon (nc-Si:H) substrate configuration n-i-p solar cells have been fabricated on soda lime glass substrates with active absorber layers prepared by plasma enhanced chemical vapor deposition (PECVD) and radio frequency magnetron sputtering.
The cells with nanocrystalline PECVD absorbers and an untextured back reflector serve as a baseline for Author: Dipendra Adhikari, Maxwell M. Junda, Corey R. Grice, Sylvain X. Marsillac, Robert W. Collins, Nikola.
Microscopic structure and electrical transport property of sputter-deposited amorphous indium-gallium-zinc oxide semiconductor films H Yabuta et al Journal of Physics: Conference Series IOPscience. Designing band offset of a-SiO:H solar cells for very high open-circuit voltage ( V) by adjusting band gap of p–i–n junction.
Amorphous silicon (a-Si) alloy has received a great deal of attention as a low-cost material for solar cells that convert sunlight into electricity. Amorphous semiconductors absorb sunlight very efficiently because of the inherent disorder, and only a very thin (solar cell structure.deposited at different sputtering power, i.e.
(a) 75W, (b) W, (c) W and (d) W. Figure-2 shows the three-dimensional (3D) AFM images of Ti thin films deposited with different sputtering power. The images were acquired in a μm x μm area. To study the surface topographies of the Ti filmsCited by: 4.We report on the preparation and characterization of Si-coatings deposited by magnetron sputtering.
The high packing density, amorphous structure and low optical absorption of the coatings demonstrates the high potential of this technology for IR-applications.